In this paper, black silicon (Si) and silver (Ag) surface plasmons were used to improve the electroluminescence (EL) intensity of silicon nanocrystals (Si-nc), and the mechanism of black Si and Ag nanoparticles enhancing the EL of Si-nc LED is analyzed. The Ag nanoparticles are introduced into Si-nc LED to generate surface plasmons. The surface plasmons radiate the local electromagnetic field, which can increase the excitation probability of Si-nc and increase the EL intensity of Si-nc LED. In addition, black silicon can improve the charge injection efficiency and light emission efficiency. The atomic force microscope (AFM) and reflectivity spectra of black silicon at different etching time, as well as the AFM and absorption spectra of Ag nanoparticles at different postannealing temperatures, were measured. Three different device structures were designed. The EL intensity of Si-nc increased by 3.2 times at the etching time of 5 minutes and increased by 4.9 times at the postannealing temperature of 200 °C, respectively. A maximal 8.5-fold EL enhancement of Si-nc was readily achieved after using the black Si as substrate and incorporating Ag surface plasmons.

本文使用黑硅（Si）和银（Ag）表面等离激元来提高硅纳米晶体（Si-nc）的电致发光（EL）强度，以及黑硅和银纳米颗粒增强Si- nc LED被分析。将Ag纳米颗粒引入Si-nc LED以产生表面等离子体激元。表面等离子体激元辐射局部电磁场，这可以增加Si-nc的激发概率并增加Si-nc LED的EL强度。另外，黑硅可以提高电荷注入效率和发光效率。测量了不同刻蚀时间下黑硅的原子力显微镜（AFM）和反射光谱，以及不同后退火温度下Ag纳米粒子的AFM和吸收光谱。设计了三种不同的器件结构。Si-nc的EL强度在5分钟的蚀刻时间增加了3.2倍，在200℃的退火温度下增加了4.9倍。使用黑色硅作为衬底并掺入银表面等离子体激元后，很容易实现Si-nc的最大8.5倍EL增强。