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Growth of Thin Epitaxial NiO Films on LiNbO 3 Substrates
Journal of Communications Technology and Electronics ( IF 0.4 ) Pub Date : 2021-01-27 , DOI: 10.1134/s106422692011011x
V. A. Luzanov

Abstract

The growth of epitaxial (111) NiO films on (0001) LiNbO3 substrates by reactive magnetron sputtering has been reported for the first time. X-ray diffraction analysis of the obtained films was carried out in combination with layer-by-layer plasma etching. It was shown that a low lattice mismatch allows one to obtain structurally perfect thin layers of NiO on LiNbO3 substrates. With increasing film thickness, the structural perfection of the film deteriorates due to the accumulation of dislocations due to ion bombardment during growth.



中文翻译:

LiNbO 3衬底上外延NiO薄膜的生长

摘要

首次报道了通过反应磁控溅射在(0001)LiNbO 3衬底上生长外延(111)NiO膜。结合逐层等离子体蚀刻对获得的膜进行X射线衍射分析。结果表明,低晶格失配使得人们可以在LiNbO 3衬底上获得结构完美的NiO薄层。随着膜厚度的增加,由于在生长期间由于离子轰击而导致的位错的积累,使膜的结构完善性劣化。

更新日期:2021-01-28
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