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Growth of Thin Epitaxial NiO Films on LiNbO3 Substrates

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Abstract

The growth of epitaxial (111) NiO films on (0001) LiNbO3 substrates by reactive magnetron sputtering has been reported for the first time. X-ray diffraction analysis of the obtained films was carried out in combination with layer-by-layer plasma etching. It was shown that a low lattice mismatch allows one to obtain structurally perfect thin layers of NiO on LiNbO3 substrates. With increasing film thickness, the structural perfection of the film deteriorates due to the accumulation of dislocations due to ion bombardment during growth.

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Funding

The work was carried out within the framework of the state task and partially was supported by the Russian Foundation for Basic Research, projects nos. 19-07-00432, 18‑29-19047, 20-07-01075.

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Authors and Affiliations

  1. Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences, 141190, Fryazino, Russia

    V. A. Luzanov

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  1. V. A. Luzanov
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Correspondence to V. A. Luzanov.

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Luzanov, V.A. Growth of Thin Epitaxial NiO Films on LiNbO3 Substrates. J. Commun. Technol. Electron. 65, 1422–1424 (2020). https://doi.org/10.1134/S106422692011011X

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  • DOI: https://doi.org/10.1134/S106422692011011X

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