Abstract

The thermal resistance of a semiconductor device determines the limiting thermal regime that guarantees its operability: the higher the thermal resistance of a semiconductor device the larger its overheating can be. Therefore, the thermal resistances of commercial devices must be controlled. At present, the method for determining the junction-to-case thermal resistance using the structure functions of the differential and integral (cumulative) thermal capacitance is widely used. The heat flow function, a new thermal characteristic proposed in this work, allows us to determine the instant of time at which the heat front reaches the heat sink. In this case, the inflection point of the heat flow function corresponds to the junction-to-case thermal resistance found using a similar method. The cumulative thermal capacitance is determined from the heat balance equation. The structure functions are determined analytically without the numerical deconvolution procedure. Comparison of the proposed method with the well-known methods that use the structure functions show that, at the same values of parameters, the processing of the results is easier, the measurement time is shorter, and strict requirements for heat removal are not imposed. The proposed method can be used to compare the designs of devices and analyze defects in the thermal resistance of finished devices.

中文翻译：

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从冷却曲线确定半导体器件的结到外壳热阻

摘要

半导体器件的热阻决定了保证其可操作性的极限热状态：半导体器件的热阻越高，其过热程度就越大。因此，必须控制商用设备的热阻。当前，广泛使用利用差分和积分（累积）热电容的结构函数确定结壳热阻的方法。热流函数是这项工作中提出的一种新的热特性，它使我们能够确定热锋到达散热器的时间点。在这种情况下，热流函数的拐点对应于使用类似方法发现的结壳热阻。累积热容量由热平衡方程确定。结构函数是通过解析确定的，而无需进行数值反卷积过程。所提出的方法与使用结构函数的众所周知的方法的比较表明，在相同的参数值下，结果的处理更容易，测量时间更短，并且对除热没有严格的要求。该方法可用于比较器件的设计并分析成品器件热阻中的缺陷。结果的处理更容易，测量时间更短，并且对散热的要求不严格。该方法可用于比较器件的设计并分析成品器件热阻中的缺陷。结果的处理更容易，测量时间更短，并且对散热的要求不严格。该方法可用于比较器件的设计并分析成品器件热阻中的缺陷。