A physics-based compact model for halo doped Silicon Nanowire Transistor with Schottky-barrier (SB) contact at the source/drain (S/D) junctions is developedconsidering the quasi-2D surface-potential solution. The halo implant is considered only at the source side to avoid hot electron effects in the high field drain region. The surface potential and electric field expressions are derived using a systematic approach. The impact of a single halo at the source is analyzed using the energy band model. The analysis shows that the halo increases the electron energy at the source side and suppresses the short channel effects. Moreover, high doping of halo decreases the tunneling barrier width, thereby increasing the ON-state current. Physics-based modeling of the surface potential at the halo boundary has ensured that the model preserves accuracy and continuity.

考虑到准二维表面电位解决方案，开发了一种基于物理的紧凑模型，用于在源/漏（S / D）结处具有肖特基势垒（SB）接触的卤素掺杂硅纳米线晶体管。仅在源极侧考虑了卤素注入，以避免在高场漏区中产生热电子效应。表面电位和电场表达式是使用系统方法得出的。使用能带模型分析了单个光晕在源头的影响。分析表明，晕圈增加了源侧的电子能量，并抑制了短沟道效应。此外，晕圈的高掺杂减小了隧穿势垒宽度，从而增加了导通电流。