Abstract

High-speed photodetectors (PDs) based on InGaAs/GaAs quantum well-dot (QWD) nanostructures with the frontal-end and back-end input of radiation have been studied. A PD with 40 rows of QWDs exhibited a spectral responsivity of up to 0.4 A/W in the 950–1100 nm optical range at a –5-V bias voltage. The decay time constant of pulsed response for PDs with an input area of 1.4 × 10^–4 cm² was ~250 ps.

中文翻译：

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基于In 0.4 Ga 0.6 As / GaAs量子阱纳米结构的950-1100 nm光学范围的高速光电探测器

摘要

研究了基于InGaAs / GaAs量子阱点（QWD）纳米结构的高速光电探测器（PDs），该结构具有辐射的前端和后端输入。带有40行QWD的PD在–5 V偏置电压下，在950–1100 nm光学范围内显示出高达0.4 A / W的光谱响应度。输入面积为1.4×10 ^–4 cm ^2的PD的脉冲响应的衰减时间常数约为250 ps。