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High-Speed Photodetectors for the 950–1100 nm Optical Range Based on In0.4Ga0.6As/GaAs Quantum Well-Dot Nanostructures

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Abstract

High-speed photodetectors (PDs) based on InGaAs/GaAs quantum well-dot (QWD) nanostructures with the frontal-end and back-end input of radiation have been studied. A PD with 40 rows of QWDs exhibited a spectral responsivity of up to 0.4 A/W in the 950–1100 nm optical range at a –5-V bias voltage. The decay time constant of pulsed response for PDs with an input area of 1.4 × 10–4 cm2 was ~250 ps.

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Funding

This work was supported in part by the Russian Science Foundation, project no. 16-12-10269.

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Authors and Affiliations

  1. Zh.I. Alferov St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    S. A. Mintairov, M. V. Maksimov & A. M. Nadtochii

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    S. A. Mintairov, I. M. Gadzhiev, N. A. Kalyuzhnyi, M. V. Nakhimovich, R. A. Salii & M. Z. Shvarts

  3. Department of Physics, National Research University “Higher School of Economics”, 190008, St Petersburg, Russia

    M. V. Maksimov, A. M. Nadtochii & A. E. Zhukov

Authors
  1. S. A. Mintairov
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  2. I. M. Gadzhiev
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  3. N. A. Kalyuzhnyi
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  4. M. V. Maksimov
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  5. A. M. Nadtochii
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  6. M. V. Nakhimovich
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  7. R. A. Salii
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  8. M. Z. Shvarts
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  9. A. E. Zhukov
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Correspondence to S. A. Mintairov.

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The authors declare that they have no conflict of interest.

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Translated by P. Pozdeev

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Mintairov, S.A., Gadzhiev, I.M., Kalyuzhnyi, N.A. et al. High-Speed Photodetectors for the 950–1100 nm Optical Range Based on In0.4Ga0.6As/GaAs Quantum Well-Dot Nanostructures. Tech. Phys. Lett. 46, 1219–1222 (2020). https://doi.org/10.1134/S106378502012024X

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  • DOI: https://doi.org/10.1134/S106378502012024X

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