Abstract

It is shown that the photoresponse threshold and photosensitivity in a photoresistor material based on silicon doped with manganese atoms with the formation of the Mn₄B nanoclusters can be changed by varying the electric field in the range of 0.1–30 V/cm. It has been found that, by changing the electric field, one can shift the photoresponse threshold of the samples at T = 100 K from 4.6 to 8 μm. The monochromatic photosensitivity at hν = 0.4 eV increases by 2.5 orders of magnitude as the field changes from 1 to 3 V/cm.

中文翻译：

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锰原子纳米团簇在3–8μm范围内的硅中电场激发的光电导率

摘要

结果表明，通过在0.1–30 V / cm的范围内改变电场，可以改变基于掺杂锰原子的硅的光敏电阻材料的光响应阈值和光敏性，并形成Mn ₄ B纳米团簇。已经发现，通过改变电场，可以将T＝ 100K下的样品的光响应阈值从4.6μm改变为8μm。在单色光敏性ħ ν= 0.4eV的数量级作为字段从1变为3伏/厘米的2.5个数量增加。