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Electric Field-Stimulated Photoconductivity in Silicon with Manganese Atom Nanoclusters in the Range of 3–8 μm

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Abstract

It is shown that the photoresponse threshold and photosensitivity in a photoresistor material based on silicon doped with manganese atoms with the formation of the Mn4B nanoclusters can be changed by varying the electric field in the range of 0.1–30 V/cm. It has been found that, by changing the electric field, one can shift the photoresponse threshold of the samples at T = 100 K from 4.6 to 8 μm. The monochromatic photosensitivity at hν = 0.4 eV increases by 2.5 orders of magnitude as the field changes from 1 to 3 V/cm.

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Authors and Affiliations

  1. Tashkent State Technical University, 100097, Tashkent, Uzbekistan

    M. K. Bakhadirkhanov, S. B. Isamov, Sh. N. Ibodullaev & S. V. Koveshnikov

  2. National University of Uzbekistan, 100174, Tashkent, Uzbekistan

    N. Norkulov

Authors
  1. M. K. Bakhadirkhanov
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  2. S. B. Isamov
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  3. Sh. N. Ibodullaev
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  4. S. V. Koveshnikov
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  5. N. Norkulov
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Correspondence to S. B. Isamov.

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The authors declare that they have no conflict of interest.

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Translated by E. Bondareva

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Bakhadirkhanov, M.K., Isamov, S.B., Ibodullaev, S.N. et al. Electric Field-Stimulated Photoconductivity in Silicon with Manganese Atom Nanoclusters in the Range of 3–8 μm. Tech. Phys. Lett. 46, 1192–1195 (2020). https://doi.org/10.1134/S1063785020120020

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  • DOI: https://doi.org/10.1134/S1063785020120020

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