Abstract

Results are reported of using subcontact layers with energy gap width E_g of 0.35 to 0.8 eV for obtaining low-resistivity electrical contacts to p-InP. An experimental dependence of the contact resistance on E_g of the subcontact material In_xGa_{1 – x}As was obtained.

中文翻译：

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具有Zn掺杂子接触层的InP基结构与p -InP的电接触

摘要

报道了使用具有0.35至0.8eV的能隙宽度E _g的亚接触层以获得与p -InP的低电阻电接触的结果。得到了接触电阻对子接触材料In _x Ga _{1- x} As E _g的实验依赖性。