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Electrical Contacts to InP-based Structures with a Zn-doped Subcontact Layer to p -InP
Technical Physics Letters ( IF 0.8 ) Pub Date : 2021-01-14 , DOI: 10.1134/s1063785020120056 V. S. Epoletov , A. E. Marichev , B. V. Pushnyi , R. A. Salii
中文翻译:
具有Zn掺杂子接触层的InP基结构与p -InP的电接触
更新日期:2021-01-14
Technical Physics Letters ( IF 0.8 ) Pub Date : 2021-01-14 , DOI: 10.1134/s1063785020120056 V. S. Epoletov , A. E. Marichev , B. V. Pushnyi , R. A. Salii
Abstract
Results are reported of using subcontact layers with energy gap width Eg of 0.35 to 0.8 eV for obtaining low-resistivity electrical contacts to p-InP. An experimental dependence of the contact resistance on Eg of the subcontact material InxGa1 – xAs was obtained.
中文翻译:
具有Zn掺杂子接触层的InP基结构与p -InP的电接触
摘要
报道了使用具有0.35至0.8eV的能隙宽度E g的亚接触层以获得与p -InP的低电阻电接触的结果。得到了接触电阻对子接触材料In x Ga 1- x As E g的实验依赖性。