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Electrical Contacts to InP-based Structures with a Zn-doped Subcontact Layer to p-InP

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Abstract

Results are reported of using subcontact layers with energy gap width Eg of 0.35 to 0.8 eV for obtaining low-resistivity electrical contacts to p-InP. An experimental dependence of the contact resistance on Eg of the subcontact material InxGa1 – xAs was obtained.

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ACKNOWLEDGMENTS

The authors are grateful for fabrication of contacts to V. Vasil’eva, a staff member of the Laboratory of Luminescence and Injected Emitters at the Ioffe Physical Technical Institute.

Funding

This study was supported by the Russian Science Foundation, project no. 17-79-30035.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    V. S. Epoletov, A. E. Marichev, B. V. Pushnyi & R. A. Salii

Authors
  1. V. S. Epoletov
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  2. A. E. Marichev
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  3. B. V. Pushnyi
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  4. R. A. Salii
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Corresponding author

Correspondence to V. S. Epoletov.

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The authors declare that they have no conflict of interest.

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Translated by M. Tagirdzhanov

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Epoletov, V.S., Marichev, A.E., Pushnyi, B.V. et al. Electrical Contacts to InP-based Structures with a Zn-doped Subcontact Layer to p-InP. Tech. Phys. Lett. 46, 1167–1169 (2020). https://doi.org/10.1134/S1063785020120056

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  • DOI: https://doi.org/10.1134/S1063785020120056

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