Abstract

It is shown that the degree of damage of the near-surface layer of p-silicon can be estimated with the aid of a MoO_x/p-Si selective contact, the current–voltage characteristics of which are highly sensitive to states on the silicon surface formed during the deposition of silicon oxide by method of magnetron sputtering.

中文翻译：

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使用MoO x / p -Si选择性接触评估硅近表面区域的降解

摘要

结果表明，可以借助MoO _x / p -Si选择性接触来估计p-硅近表面层的破坏程度，该接触点的电流-电压特性对硅上的状态高度敏感通过磁控溅射法在氧化硅沉积过程中形成的表面。