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Using MoOx/p-Si Selective Contact for Evaluation of the Degradation of a Near-Surface Region of Silicon

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Abstract

It is shown that the degree of damage of the near-surface layer of p-silicon can be estimated with the aid of a MoOx/p-Si selective contact, the current–voltage characteristics of which are highly sensitive to states on the silicon surface formed during the deposition of silicon oxide by method of magnetron sputtering.

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Funding

This work was performed in the framework of project no. 0788-2020-0008 and supported in part by the Ministry of Science and Higher Education of the Russian Federation, project no. 075-00306-20-01.

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Authors and Affiliations

  1. Zh.I. Alferov St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    D. A. Kudryashov, A. S. Gudovskikh, A. I. Baranov, A. V. Uvarov & I. A. Morozov

  2. St. Petersburg Electrotechnical University “LETI”, 197376, St. Petersburg, Russia

    A. S. Gudovskikh & A. A. Maksimova

Authors
  1. D. A. Kudryashov
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  2. A. S. Gudovskikh
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  3. A. A. Maksimova
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  4. A. I. Baranov
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  5. A. V. Uvarov
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  6. I. A. Morozov
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Corresponding author

Correspondence to D. A. Kudryashov.

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The authors declare that they have no conflict of interest.

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Translated by P. Pozdeev

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Kudryashov, D.A., Gudovskikh, A.S., Maksimova, A.A. et al. Using MoOx/p-Si Selective Contact for Evaluation of the Degradation of a Near-Surface Region of Silicon. Tech. Phys. Lett. 46, 1245–1248 (2020). https://doi.org/10.1134/S1063785020120202

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  • DOI: https://doi.org/10.1134/S1063785020120202

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