This paper presents a generalized charge-based EKV MOSFET model that includes the effects of trapped charges in the bulk oxide and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface-trapped charges, the mobile charge density can still be linearized but with respect to both the surface potential and the channel voltage. This enables us to derive closed-form expressions for the mobile charge density and the drain current. These simple formulations demonstrate the effects of charge trapping on MOSFET characteristics and crucial device parameters. The proposed charge-based analytical model, including the effect of velocity saturation, is successfully validated through measurements performed on devices from a 28-nm bulk CMOS technology. Ultrahigh total ionizing doses up to 1 Grad(SiO₂) are applied to generate oxide-trapped charges and activate the passivated interface traps. Despite a small number of parameters, the model is capable of accurately capturing the measurement results over a wide range of device operation from weak to strong inversion. Explicit expressions of device parameters also allow for the extraction of the oxide- and interface-trapped charge density.

本文提出了一种基于电荷的通用EKV MOSFET模型，该模型包括在体氧化物和硅/氧化物界面中捕获的电荷的影响。结果表明，在存在氧化物和界面俘获电荷的情况下，可移动电荷密度仍可以线性化，但是相对于表面电势和沟道电压而言。这使我们能够导出移动电荷密度和漏极电流的闭合形式。这些简单的公式证明了电荷陷阱对MOSFET特性和关键器件参数的影响。通过对28纳米体CMOS技术的器件进行测量，成功验证了所提出的基于电荷的分析模型，其中包括速度饱和的影响。高达1 Grad（SiO _2的超高总电离剂量）被施加以产生氧化物俘获的电荷并激活钝化的界面陷阱。尽管参数数量很少，但是该模型仍能够在从弱到强反转的大范围设备操作中准确捕获测量结果。器件参数的明确表达还允许提取氧化物和界面陷阱电荷密度。