A generalized EKV charge-based MOSFET model including oxide and interface traps
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Chun-Min Zhang received her M. Sc. in Microelectronics and Solid-State Electronics from Fudan University, China in 2014. Since 2015, she has been a doctoral assistant in Integrated Circuits Laboratory (ICLAB), École Polytechnique Fédérale de Lausanne (EPFL), Switzerland. She is now working on characterization and modeling of total ionizing dose effects on nanoscale MOSFETs for particle physics experiments.
Christian Enz PhD, Swiss Federal Institute of Technology (EPFL), 1989. He is currently Professor at EPFL, Director of the Institute of Microengineering and head of the IC Lab. Until April 2013 he was VP at the Swiss Center for Electronics and Microtechnology (CSEM) in Neuchatel, Switzerland where he was heading the Integrated and Wireless Systems Division. Prior to joining CSEM, he was Principal Senior Engineer at Conexant (formerly Rockwell Semiconductor Systems), Newport Beach, CA, where he was responsible for the modeling and characterization of MOS transistors for RF applications. His technical interests and expertise are in the field of ultra low-power and low-noise analog and RF IC design and semiconductor device modeling. Together with E. Vittoz and F. Krummenacher he is the developer of the EKV MOS transistor model. He is the author and co-author of more than 260 scientific papers and has contributed to numerous conference presentations and advanced engineering courses. He is an IEEE Fellow and an individual member of the Swiss Academy of Engineering Sciences (SATW). He has been an elected member of the IEEE Solid-State Circuits Society (SSCS) AdCom from 2012 to 2014 and was Chair of the IEEE SSCS Chapter of Switzerland until 2017.