Advances in magnetoelectric BiFeO₃ open the opportunity to commercialize innovative memory devices. Spin-based technology was employed to fabricate the magnetic random access memory (MRAM). The ferroelectric random access memory (FeRAM) based on ferroelectricity was also realized. Both memories have great properties, but unfortunately with some flaws. A new vision was hypothesized to combine both memories to create unlimited memory device. Combination of MRAM and FeRAM means coupling of ferromagnetic-ferroelectric properties in single material. Studies on magnetoelectric BiFeO₃ might hold the future for memory devices with thousands of published papers in last years. In this review, we tried to show a comprehensive picture of the large number of studies on multiferroic BiFeO₃ including techniques to enhance the properties and remove obstacles. Here, we begin with an overview of spintronics memory devices and multiferroic materials. An organized classification of studies depended on occupation site in BiFeO₃ and type of dopant was presented.

磁电BiFeO _3的进步为创新存储设备的商业化提供了机会。采用基于自旋的技术来制造磁性随机存取存储器（MRAM）。还实现了基于铁电的铁电随机存取存储器（FeRAM）。两种记忆都有很好的特性，但不幸的是存在一些缺陷。设想了一种新的愿景，即将两种内存结合起来以创建无限的存储设备。MRAM和FeRAM的组合意味着单一材料中铁磁-铁电特性的耦合。近年来，关于磁电BiFeO _3的研究可能会在存储设备中占据上风，其发表的论文数以千计。在这篇综述中，我们试图展示有关多铁性BiFeO的大量研究的综合情况。₃包括增强属性和消除障碍的技术。在这里，我们从旋转电子存储设备和多铁性材料的概述开始。根据BiFeO _3中的占领位点和掺杂剂的类型，对研究进行了有组织的分类。