The carbon vacancy in 4H-SiC is an important recombination center of the minority carrier and a direct consequence of SiC-based device degradation. In 4H-SiC, this defect acts as the primary carrier-lifetime killer. Whether, low-energy electron radiation exposure or high temperature processing in an inert ambient gas will produce the carbon vacancy defect. Despite, the extensiveness of the studies concerning the defect’s modeling and characterization, numerous essential questions remain. Amongst them, we have the impact of these defects on the performance of 4H-SiC MOSFET. Herein, the influence of intrinsic defect states, namely, Z_1/2 and EH_6/7 centers, on the 4H-SiC MOSFET electrical outputs is examined via 2D numerical simulation. The obtained results show that the traps act to increase the device on-state resistance (R_ON), reduce the channel mobility, increase the threshold voltage (V_th). Besides, the increase of the temperature leads to less influence of the traps on the threshold variation. Furthermore, due to their locations in the bandgap, the impact of both Z_1/2 and EH_6/7 centers at room temperature on the device electrical outputs is extreme. For high temperature the EH_6/7 have the severest impact because of the cross section temperature dependency.

4H-SiC中的碳空位是少数载流子的重要复合中心，也是SiC基器件退化的直接结果。在4H-SiC中，此缺陷是主要的载流子寿命杀手。在惰性环境气体中进行低能电子辐射照射或高温处理都会产生碳空位缺陷。尽管有关缺陷的建模和表征的研究广泛，但仍存在许多基本问题。其中，这些缺陷对4H-SiC MOSFET的性能有影响。这里，固有缺陷状态的影响，即Z _1/2和EH _6/7中心，通过2D数值模拟检查4H-SiC MOSFET的电输出。所获得的结果表明，陷阱的作用是增加器件的导_通电阻（R _ON），减小沟道迁移率，增加阈值电压（V _th）。此外，温度的升高导致阱对阈值变化的影响较小。此外，由于它们在带隙中的位置，室温下Z _1/2和EH _6/7中心对设备电输出的影响非常大。对于高温，EH _6/7由于截面温度依赖性而影响最严重。