Phase formation in a solid state reaction in Al/Cu bilayer and multilayer thin films was studied by the methods of in situ transmission electron microscopy, electron diffraction, simultaneous thermal analysis and x-ray diffraction. It was established that the phase formation sequences in the (Al/Cu)_n (n = 2, 15) multilayer thin films (θ-Al₂Cu → γ₁-Al₄Cu₉ → η₂-AlCu) and Al/Cu bilayer thin films (θ-Al₂Cu → η₂-AlCu → γ₁-Al₄Cu₉) were different. It was assumed that the phase formation process in the thin films was strongly affected by a number of copper/aluminum interfaces due to the changes of aluminum and copper diffusion current.

通过原位透射电子显微镜，电子衍射，同时热分析和X射线衍射等方法研究了Al / Cu双层和多层薄膜在固态反应中的相形成。它建立在（铝/铜）相形成序列_Ñ（Ñ  = 2，15）的多层薄膜（θ-Al系₂铜→γ ₁ -Al ₄的Cu ₉  →η ₂ -AlCu）和铝/铜双层薄膜（θ-Al系₂的Cu→η ₂ -AlCu→γ ₁ -Al ₄的Cu ₉）是不同的。假定由于铝和铜扩散电流的变化，薄膜中的相形成过程受到许多铜/铝界面的强烈影响。