In this paper, the effect of perforations on both pull-in voltage and S-parameters have been studied experimentally and compared with the simulation results of perforated and non-perforated switch designs for validation. The perforated switch is fabricated using 4-mask layer process and low pull-in voltage of 1.85 V is achieved by introducing novel iterative methodology which reduce spring constant of meanders. The switch shows good insertion loss of − 0.16 dB and isolation of − 54.8 dB at 40 GHz. Due to perforations, the deviation of pull-in voltage is observed from 1.6 V to 1.85 V and also decrement in capacitive area results in frequency shift of 1000 MHz which shows huge effect in operating frequency of RF MEMS switch. The proposed switch can be efficiently used for 5G GSMA applications operating at 40 GHz frequency.

本文通过实验研究了穿孔对吸合电压和S参数的影响，并将其与穿孔和非穿孔开关设计的仿真结果进行比较，以进行验证。穿孔开关采用4掩模层工艺制造，通过引入新颖的迭代方法降低了弯曲的弹簧常数，从而实现了1.85 V的低吸合电压。该开关在40 GHz频率下的插入损耗为-0.16 dB，隔离度为-54.8 dB。由于存在穿孔，观察到了吸合电压从1.6 V到1.85 V的偏差，并且电容面积的减小也导致了1000 MHz的频移，这对RF MEMS开关的工作频率产生了巨大影响。拟议的交换机可以有效地用于以40 GHz频率运行的5G GSMA应用。