Abstract

The main trends in the modern development of magnetic microelectronics are miniaturization and operation speed, while ensuring efficient operation in the MHz and GHz frequency ranges of magnetic fields. Creating new magnetic materials characterized by properties providing these trends is the most important fundamental and applied problem of materials science. In this regard, nanocrystalline soft magnetic alloys belonging to Fe–Me–X systems (Me is one of the metals of the IVb group of the periodic table; X is one of the light elements N, C, O, or B) obtained in the form of films attract great attention. Such films produced by magnetron sputtering and characterized by the Fe/MeX two-phase structure are capable, as was shown earlier by the authors of the present article using the example of Fe–Zr–N films, of providing a combination of high saturation induction B_s, low coercive field H_c, and high hardness and thermal stability of the structure. The films were prepared by magnetron sputtering. In accordance with the initial data obtained by the authors, the films of the FeTiB system can provide better properties as compared with FeZrN films. The published data on FeTiB films in the context of their application in microelectronic devices are very sparse. In the present work we continue studies of FeTiB films aimed at identifying the chemical and phase composition providing the level of properties required for the application of the films in microelectronics. The nanocrystalline films containing from 0 to 14.3 at % Ti and from 0 to 28.9 at % B are obtained by DC magnetron sputtering. The phase-structural state of the films is studied by X-ray diffraction and transmission electron microscopy. According to the phase composition, all films are divided into three groups: single-phase (supersaturated solid solution of Ti in α-Fe), two-phase (α-Fe(Ti)/αTi, α-Fe(Ti)/TiB₂, α-Fe(Ti)/FeTi, and α‑Fe(Ti)/Fe₂B), and XRD amorphous. The XRD amorphous films are shown to be characterized by a mixed structure made of a solid solution α-Fe(Ti) with a grain size in the range from 0.7 to 2 nm and an amorphous phase. A reasonable assumption has been made that the amorphous phase is enriched by boron. A quantitative assessment of the grain size of the α-Fe(Ti) phase and its dependence on the chemical and phase composition of the films is given. The mechanisms of solid-solution and dispersion strengthening determine the grain size of this phase.

中文翻译：

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磁控溅射制备FeTiB薄膜中非平衡相结构态形成过程的研究

摘要

磁性微电子学现代发展的主要趋势是小型化和运行速度，同时确保在MHz和GHz频率范围内磁场的有效运行。创建具有这些趋势的特性的新型磁性材料是材料科学最重要的基础和应用问题。在这方面，从Fe-Me-X系统获得的纳米晶软磁合金（Me是元素周期表IVb组的金属之一； X是N，C，O或B的轻元素之一）电影的形式引起了极大的关注。通过磁控溅射制备的这种具有Fe / MeX两相结构特征的薄膜，如本文作者先前以Fe–Zr–N薄膜为例所证明的那样，具有一定的能力，乙_小号，低的矫顽场ħ _Ç，以及高硬度和热稳定性的结构。膜通过磁控溅射制备。根据作者获得的初步数据，与FeZrN薄膜相比，FeTiB系统的薄膜可以提供更好的性能。FeTiB薄膜在微电子设备中的应用方面，已发表的数据非常稀疏。在目前的工作中，我们继续研究FeTiB薄膜，旨在鉴定化学和相组成，从而提供将薄膜应用于微电子领域所需的性能水平。通过DC磁控溅射获得包含0至14.3原子％的Ti和0至28.9原子％的B的纳米晶体膜。通过X射线衍射和透射电子显微镜研究了膜的相结构状态。根据相组成₂，α-Fe（Ti）/ FeTi和α‑Fe（Ti）/ Fe ₂ B）和XRD非晶态。XRD无定形膜的特征在于由固溶体α-Fe（Ti）制成的混合结构，其晶粒尺寸在0.7至2nm的范围内，并具有无定形相。已经做出合理的假设，即非晶相被硼富集。定量评估了α-Fe（Ti）相的晶粒尺寸及其对薄膜化学和相组成的依赖性。固溶和分散强化的机制决定了该相的晶粒尺寸。