SiC focus rings are mount on the stage at the surround of wafer in the reactive ion etching chamber, in order to make the etching rate uniform. SiC is used for the material of focus ring because it has higher plasma resistance than Si. We investigated a new method to recycle SiC without using the chemical vapor deposition (CVD) method. The recycling process consists of grinding, dry cleaning, hot isostatic pressing (HIP), atmospheric burning, and aqueous solution cleaning. As a result, diffusion bonding with a tensile strength of 100 kg cm⁻² or more was realized by reducing the surface roughness at the diffusion bonding surface to 0.1 μm or less. It was confirmed that the SiC surface was oxidized with thickness 135 nm by atmospheric burning in air ambience. It was also confirmed that the oxide layer at the SiC surface was completely removed by the aqueous solution cleaning. We have reduced the cost to 50% for SiC focus ring replacement by using the recycle method.

SiC聚焦环被安装在反应离子蚀刻室中晶片周围的平台上，以使蚀刻速率均匀。SiC被用作聚焦环的材料，因为它具有比Si更高的等离子体电阻。我们研究了一种无需使用化学气相沉积（CVD）方法即可回收SiC的新方法。回收过程包括研磨，干洗，热等静压（HIP），常压燃烧和水溶液清洁。其结果是，扩散接合用的拉伸强度100公斤厘米^-2或多个通过降低表面粗糙度在扩散接合表面至0.1来实现μ米或更少。可以确认，通过在大气中进行大气燃烧，SiC的表面被氧化了135nm的厚度。还证实了通过水溶液清洁完全去除了SiC表面上的氧化物层。通过使用回收方法，我们已将SiC聚焦环更换的成本降低至50％。