Abstract

Plastic relaxation of a stressed semipolar AlN(\(10\bar {1}1\)) layer synthesized on a nanopatterned Si(100) substrate has been investigated using scanning electron microscopy. It is shown that the application of a nanorelief consisting of triangular nanogrooves with inclined faces close to the Si(111) plane in a semipolar AlN layer can lead to the formation of cracks only in the direction perpendicular to a groove. Model concepts of plastic relaxation of the stressed semipolar layer are based on comparison of the threshold stress, above which cracks appear, with the thermomechanical stresses emerging because of the difference between the thermal expansion coefficients of the AlN/Si structure.

中文翻译：

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纳米图案化Si（100）衬底上合成的应力半极性AlN（$$ 10 \ bar {1} 1 $$）层的塑性弛豫

摘要

使用扫描电子显微镜研究了在纳米图案的Si（100）衬底上合成的应力半极性AlN（\（10 \ bar {1} 1 \））层的塑性弛豫。结果表明，在半极性AlN层中应用由三角形斜面接近Si（111）平面的三角形纳米槽组成的纳米浮雕只能导致在垂直于凹槽的方向上形成裂纹。受应力的半极性层塑性松弛的模型概念基于阈值应力的比较，在阈值应力之上会出现裂纹，并且由于AlN / Si结构的热膨胀系数之间的差异而出现热机械应力。