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Plastic Relaxation of Stressed Semipolar AlN(\(10\bar {1}1\)) Layer Synthesized on a Nanopatterned Si(100) Substrate

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Abstract

Plastic relaxation of a stressed semipolar AlN(\(10\bar {1}1\)) layer synthesized on a nanopatterned Si(100) substrate has been investigated using scanning electron microscopy. It is shown that the application of a nanorelief consisting of triangular nanogrooves with inclined faces close to the Si(111) plane in a semipolar AlN layer can lead to the formation of cracks only in the direction perpendicular to a groove. Model concepts of plastic relaxation of the stressed semipolar layer are based on comparison of the threshold stress, above which cracks appear, with the thermomechanical stresses emerging because of the difference between the thermal expansion coefficients of the AlN/Si structure.

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ACKNOWLEDGMENTS

The authors are grateful to LLC Quantum Silicon (Moscow, Russia) for supplying nanostructured Si(100) substrates and to V.K. Smirnov for fruitful discussions.

Funding

This study was supported in part by the Russian Foundation for Basic Research, project no. 20-08-00096.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    V. N. Bessolov, E. V. Konenkova & V. N. Panteleev

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  1. V. N. Bessolov
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  2. E. V. Konenkova
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  3. V. N. Panteleev
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Correspondence to V. N. Bessolov.

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The author declare that they have no conflicts of interest.

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Translated by N. Wadhwa

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Bessolov, V.N., Konenkova, E.V. & Panteleev, V.N. Plastic Relaxation of Stressed Semipolar AlN(\(10\bar {1}1\)) Layer Synthesized on a Nanopatterned Si(100) Substrate. Tech. Phys. 65, 2031–2034 (2020). https://doi.org/10.1134/S1063784220120051

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