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Mechanisms of Stress Generation in Thin Films and Coatings
Technical Physics ( IF 1.1 ) Pub Date : 2020-12-11 , DOI: 10.1134/s1063784220120257
A. R. Shugurov , A. V. Panin

Abstract

Analysis of the literature data on the reasons for the development of mechanical stresses in epitaxial, polycrystalline, and amorphous films during their formation and under various external influences is carried out. The mechanism of the appearance of internal stresses during heteroepitaxial growth of films caused by the mismatch of the crystal lattice constants of the film and substrate is described. The relationship between the development of mismatch stresses in heteroepitaxial films and changes in the nature of their growth is shown. Models of the occurrence of compressive and tensile stresses in polycrystalline films due to the formation and coalescence of islands at the initial stage of their growth are considered. The regularities of the evolution of internal stresses in continuous films are discussed depending on the conditions of their deposition, as well as their chemical composition, structure, and mechanical properties. The mechanisms of development of internal stresses in thin films associated with the formation of point defects in them, the incorporation of impurities, and phase transformations occurring in the deposition process are reviewed. External factors that lead to the appearance of stresses in thin films during their storage and operation are considered in detail.



中文翻译:

薄膜和涂层中应力产生的机理

摘要

对在外延膜,多晶膜和非晶膜形成过程中以及在各种外部影响下产生机械应力的原因的文献数据进行了分析。描述了薄膜异质外延生长过程中由于薄膜和基板的晶格常数不匹配而引起的内应力出现机理。显示了异质外延膜中失配应力的发展与其生长性质变化之间的关系。考虑了在岛生长初期由于岛的形成和聚结而在多晶膜中产生压应力和拉应力的模型。讨论了连续膜中内部应力的变化规律,具体取决于其沉积条件,化学成分,结构和机械性能。综述了薄膜内部应力发展的机理,这些机理与薄膜中点缺陷的形成,杂质的掺入以及在沉积过程中发生的相变有关。详细考虑了导致薄膜在存储和操作过程中出现应力的外部因素。回顾了沉积过程中发生的相变。详细考虑了导致薄膜在存储和操作过程中出现应力的外部因素。回顾了沉积过程中发生的相变。详细考虑了导致薄膜在存储和操作过程中出现应力的外部因素。

更新日期:2020-12-12
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