Abstract

The photostability of the luminescent properties of CuInS₂/ZnS quantum dots (CIS/ZnS QDs) as a monolayer on a dielectric substrate and as part of a hybrid structure with multilayer graphene nanoribbons (ML GNRs) has been studied. Analysis of the luminescence kinetics of quantum dots has revealed the presence of three main components of luminescence attenuation, characterized by times of the order of 20, 100, and 300 ns. It has been shown that the efficiency of the interaction between CIS/ZnS quantum dots and multilayer graphene nanoribbons has a dependence on the number of graphene monolayers similar to that of CdSe quantum dots. The photostability of CIS/ZnS QDs on a dielectric substrate and in structures with multilayer graphene nanoribbons has been estimated, which allowed us to estimate the energy/charge transfer rates from QDs to multilayer graphene nanoribbons as 10⁶–10⁷ s^–1.

中文翻译：

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CuInS 2 / ZnS量子点中的光稳定性和光诱导过程及其与多层石墨烯纳米带的杂化结构

摘要

CuInS ₂发光性质的光稳定性/ ZnS量子点（CIS / ZnS QDs）作为介电基片上的单层，并且是与多层石墨烯纳米带（ML GNRs）混合结构的一部分。量子点的发光动力学分析表明存在发光衰减的三个主要成分，其特征在于时间约为20、100和300 ns。已经表明，CIS / ZnS量子点与多层石墨烯纳米带之间相互作用的效率与CdSe量子点类似，对石墨烯单层的数目具有依赖性。已经估计了介电基体上和具有多层石墨烯纳米带的结构中CIS / ZnS QD的光稳定性，这使我们可以估计从QD到多层石墨烯纳米带的能量/电荷转移速率为10 ⁶–10 ⁷ s ^–1。