Electrical measurements on heavily doped n -type germanium subjected to gamma-irradiation show that the features of impurity-related defect formation before n – p conversion of conductivity type are the same as those previously observed in lightly and moderately doped materials, thus extending the range of doping from ≈10¹⁴ to ≈10¹⁶ cm^–3. It is clear now that the presently adopted model of the dominant impurity-related defects as simple vacancy-impurity pairs in irradiated n -Ge, in analogy to such defects reliably identified in irradiated n -Si, appears to be inconsistent with the experimental information collected so far. As a consequence, the impurity diffusion simulations in heavily doped Ge based on this model need to be reconsidered. The requirements to be met while modeling impurity-related defects in irradiated n -Ge in accordance with the reliable experimental data are established.

中文翻译：

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辐照 n型 锗中与杂质有关的缺陷的建模 ：对理论的挑战

对重掺杂的 n 型锗进行伽玛辐照的电学测量 表明，在电导率类型的 n - p 转换之前，与杂质相关的缺陷形成的特征与 先前在轻度和中度掺杂的材料中观察到的特征相同，因此扩展了范围从≈10掺杂¹⁴至≈10 ¹⁶厘米^-3。现在清楚的是，目前采用的主要杂质相关缺陷模型是被辐照的 n -Ge中简单的空位-杂质对 ，类似于在辐照 n中 可靠地识别出的缺陷。 -Si，似乎与迄今为止收集的实验信息不一致。结果，需要重新考虑基于该模型的重掺杂锗的杂质扩散模拟。建立了根据可靠的实验数据对被辐照的 n -Ge中与杂质有关的缺陷进行建模时要满足的要求 。