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Towards the Modeling of Impurity-Related Defects in Irradiated n-Type Germanium: a Challenge to Theory

  • ELECTRONIC PROPERTIES OF SEMICONDUCTORS
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Abstract

Electrical measurements on heavily doped n-type germanium subjected to gamma-irradiation show that the features of impurity-related defect formation before n–p conversion of conductivity type are the same as those previously observed in lightly and moderately doped materials, thus extending the range of doping from ≈1014 to ≈1016 cm–3. It is clear now that the presently adopted model of the dominant impurity-related defects as simple vacancy-impurity pairs in irradiated n-Ge, in analogy to such defects reliably identified in irradiated n-Si, appears to be inconsistent with the experimental information collected so far. As a consequence, the impurity diffusion simulations in heavily doped Ge based on this model need to be reconsidered. The requirements to be met while modeling impurity-related defects in irradiated n-Ge in accordance with the reliable experimental data are established.

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Notes

  1. Several earlier illustrations of this kind can be found in [26, 27]. Taking an opportunity a misprint in Figs. 4a, 4b [27] must be corrected: the ionization energy of phosphorus in Ge crystals is 12.0 meV.

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  1. Ioffe Institute, 194021, St. Petersburg, Russia

    V. V. Emtsev & G. A. Oganesyan

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  1. V. V. Emtsev
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Emtsev, V.V., Oganesyan, G.A. Towards the Modeling of Impurity-Related Defects in Irradiated n-Type Germanium: a Challenge to Theory. Semiconductors 54, 1388–1394 (2020). https://doi.org/10.1134/S106378262011007X

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