Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential − V δ( z ), are studied theoretically. The ratio of the amplitude V to e ²/ ε ( ε is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with V according to power laws V ^1/4 and V in the cases of weak and strong localization, respectively.

中文翻译：

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激子在半导体晶体平面缺陷中的定位

上的平面短程缺陷，这是由潜在模拟一个大半径的激子局域态- V δ（ Ž ），在理论上研究。振幅 V 与 e ² / ε的比 （ ε 是介电常数）决定了弱和强局部化的两种渐近状态。在两种情况下，与激子辐射增加寿命 V 根据幂律 V ^1/4和 V 分别在弱和强局部化的情况下，。