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Localization of Excitons on Planar Defects in Semiconductor Crystals

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Abstract

Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential −Vδ(z), are studied theoretically. The ratio of the amplitude V to e2/ε (ε is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with V according to power laws V1/4 and V in the cases of weak and strong localization, respectively.

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Acknowledgments

We are grateful to M.M. Glazov for access to work [4] prior to publication.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    M. M. Mahmoodian & A. V. Chaplik

  2. Novosibirsk State University, Novosibirsk, 630090, Russia

    M. M. Mahmoodian & A. V. Chaplik

Authors
  1. M. M. Mahmoodian
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  2. A. V. Chaplik
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Correspondence to M. M. Mahmoodian or A. V. Chaplik.

Additional information

Russian Text © The Author(s), 2020, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2020, Vol. 112, No. 4, pp. 246–250.

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Mahmoodian, M.M., Chaplik, A.V. Localization of Excitons on Planar Defects in Semiconductor Crystals. Jetp Lett. 112, 230–233 (2020). https://doi.org/10.1134/S0021364020160080

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  • DOI: https://doi.org/10.1134/S0021364020160080

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