Abstract

A MoS₂ sheet in its 1T ' phase is a two-dimensional topological insulator. It possesses highly conductive edge states which, due to topological protection, are insensitive to back scattering and are suitable for device channels. A transition between the topological and conventional insulator phases in a wide 1T '-MoS₂ sheet is controlled by an electric field orthogonal to the sheet. In order to enhance the current through the channel several narrow nanoribbons are stacked. We evaluate the subbands in a narrow nanoribbon of 1T '-MoS₂ by using an effective k ∙ p Hamiltonian. In contrast to a wide channel, a small gap in the spectrum of edge states in a nanoribbon increases with the electric field. It results in a rapid decrease in the nanoribbon conductance with the field, making it potentially suitable for current switching.

中文翻译：

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1 T'-MoS 2纳米带拓扑中的弹道电导

摘要

1 T '相的MoS ₂薄板是二维拓扑绝缘体。它具有高度导电的边缘状态，由于拓扑结构的保护，它对反向散射不敏感，适合用于设备通道。在很宽的1拓扑和常规绝缘体相之间的过渡Ť “-MoS ₂片通过电场垂直于片材的控制。为了增强通过通道的电流，将几个窄的纳米带堆叠在一起。我们评价以1:1的窄纳米带中的子带Ť “-MoS ₂通过使用有效ķ ∙ p哈密​​尔顿 与宽通道相反，纳米带的边缘态光谱中的小间隙随电场而增加。这导致纳米带电导随电场迅速降低，使其潜在地适合于电流切换。