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Ballistic Conductance in a Topological 1T '-MoS2 Nanoribbon

  • XXVIII INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”, MINSK, REPUBLIC OF BELARUS, SEPTEMBER, 2020. SPIN RELATED PHENOMENA IN NANOSTRUCTURES
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Abstract

A MoS2 sheet in its 1T ' phase is a two-dimensional topological insulator. It possesses highly conductive edge states which, due to topological protection, are insensitive to back scattering and are suitable for device channels. A transition between the topological and conventional insulator phases in a wide 1T '-MoS2 sheet is controlled by an electric field orthogonal to the sheet. In order to enhance the current through the channel several narrow nanoribbons are stacked. We evaluate the subbands in a narrow nanoribbon of 1T '-MoS2 by using an effective k ∙ p Hamiltonian. In contrast to a wide channel, a small gap in the spectrum of edge states in a nanoribbon increases with the electric field. It results in a rapid decrease in the nanoribbon conductance with the field, making it potentially suitable for current switching.

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ACKNOWLEDGMENTS

The financial support by the Austrian Federal Ministry for Digital and Economic Affairs and the National Foundation for Research, Technology and Development is gratefully acknowledged. A.-M.E-S. was partly supported by the project no. IN 23/2018 “Atom-to-Circuit” modeling technique for exploration of Topological Insulator based ultra-low power electronics’ by the Centre for International Cooperation and Mobility (ICM) of the Austrian Agency for International Cooperation in Education and Research (OeAD).

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Authors and Affiliations

  1. Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at Institute for Microelectronics, TU Wien, Austria

    V. Sverdlov

  2. Institute for Microelectronics, TU Wien, Austria

    E. A.-M. El-Sayed, H. Kosina & S. Selberherr

Authors
  1. V. Sverdlov
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  2. E. A.-M. El-Sayed
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  3. H. Kosina
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  4. S. Selberherr
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Correspondence to V. Sverdlov, E. A.-M. El-Sayed, H. Kosina or S. Selberherr.

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Sverdlov, V., El-Sayed, E.AM., Kosina, H. et al. Ballistic Conductance in a Topological 1T '-MoS2 Nanoribbon. Semiconductors 54, 1713–1715 (2020). https://doi.org/10.1134/S1063782620120386

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  • DOI: https://doi.org/10.1134/S1063782620120386

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