In this study, the hydrothermal method is used for the synthesis of Vanadium pentoxide (V₂O₅) microstructure. Analysis stands for the growth of microstructure in only the orthorhombic phase. The dot pattern in SAED image shows the crystalline nature of microstructure. Raman analysis shows the layered structure of V₂O₅. The morphological study of V₂O₅ shows the flower-like microstructure formed by nanorods having diameter ~3 μm. The transport measurement study confirmed the semiconductor nature of the microstructure in the temperature range 200K ≤ T ≤ 380K, and by Arrhenius analysis, we find the activation energy as 185 meV in the temperature range 285K–380K. In the lower temperature range 200K–285K the system shows the variable range hopping conduction of the charge carriers. An anomalous magnetization response is also evidenced in these V₂O₅ specimen in a narrow temperature range of ~45–60K where the magnetic ground state is antiferromagnetic. Interestingly, this state is bounded by paramagnetic states both at high and low temperatures.

在这项研究中，水热法用于五氧化二钒（V ₂ O ₅）微观结构的合成。分析代表仅在正交相中的微观结构的生长。SAED图像中的点图显示了微结构的晶体性质。拉曼分析显示了V ₂ O ₅的层状结构。V ₂ O ₅的形态研究显示由直径约3μm的纳米棒形成的花状微结构。传输测量研究证实了200K≤T≤380K温度范围内的微结构的半导体性质，通过Arrhenius分析，我们发现在285K–380K温度范围内的活化能为185 meV。在200K至285K的较低温度范围内，系统显示了电荷载流子的可变范围跳跃传导。在大约45-60K的狭窄温度范围内，这些V ₂ O ₅样品中也有异常的磁化响应，其中磁性基态是反铁磁性的。有趣的是，该状态在高温和低温下都受到顺磁态的限制。