Elsevier

Physica B: Condensed Matter

Volume 603, 15 February 2021, 412622
Physica B: Condensed Matter

Electrical and magnetic properties of V2O5 microstructure formed by self-assembled nanorods

https://doi.org/10.1016/j.physb.2020.412622Get rights and content

Highlights

  • Vanadium pentoxide flower like microstructures formed by self-assembled nanorods was synthesized by Hydrothermal method.

  • The temperature versus resistivity plot shows the semiconducting nature of the microstructure.

  • The magnetic characterization shows the paramagnetic behavior with small component of ferromagnetic behavior due to presence of small amount of V+4 oxidation state of vanadium.

Abstract

In this study, the hydrothermal method is used for the synthesis of Vanadium pentoxide (V2O5) microstructure. Analysis stands for the growth of microstructure in only the orthorhombic phase. The dot pattern in SAED image shows the crystalline nature of microstructure. Raman analysis shows the layered structure of V2O5. The morphological study of V2O5 shows the flower-like microstructure formed by nanorods having diameter ~3 μm. The transport measurement study confirmed the semiconductor nature of the microstructure in the temperature range 200K ≤ T ≤ 380K, and by Arrhenius analysis, we find the activation energy as 185 meV in the temperature range 285K–380K. In the lower temperature range 200K–285K the system shows the variable range hopping conduction of the charge carriers. An anomalous magnetization response is also evidenced in these V2O5 specimen in a narrow temperature range of ~45–60K where the magnetic ground state is antiferromagnetic. Interestingly, this state is bounded by paramagnetic states both at high and low temperatures.

Introduction

V2O5 is one of the most promising transition metal oxide semiconductor having high anisotropic electrical and optical properties in its orthorhombic phase [1]. Because of its exceptional physical and chemical properties it is widely used for variety of applications such as gas sensor [2], Li-ion batteries [3], photo catalyst [4], electrochromic devices [5]. In recent time variety of synthesis methods are used for synthesis of different types of nano and microstructures of vanadium pentoxide such as hydrothermal synthesis [6,7], sol-gel method [8], thermal evaporation [9]. Among all the synthesis method of V2O5 nano/micro structure, hydrothermal method is the facile method for preparation of metal oxide with the porous structure in the pure form and this method is easy to synthesized for industrial production. Currently V2O5 is used as most versatile material for Li-ion battery due to its layered structure, stable and large reversible capacities [10], high energy density [11], environment friendly [12] and low cost [13] material in the series of transition metal oxides. The vanadium oxide is well known for their structural transformation and electronic phase transition such as metal to insulator (MIT) and metal to semiconductor (MIS) [14]. The study of the temperature dependent resistivity/conductivity of the V2O5 microstructured material is important for understanding the charge transport and the microscopic mechanism of the charge carrier transfer.

There are reports on the analysis of electrical and magnetic properties of V2O5 nanostructures [1,14,15]. Parida et al. [15] have reported the room temperature ferromagnetism in V2O5 nanoflower structures. In this report the observed ferromagnetic behavior of V2O5 nanoflowers is attributed to the oxygen vacancies in the nanoflower structure. Dreifus et al. [1] investigated the magnetic properties of V2O5 polycrystal, and concluded the existence of predominant paramagnetic behavior in the temperature ranging from 5K–300K with superimposed peak at 80K which is associated with an antiferromagnetic phase. However, a detailed and systematic study is needed to thoroughly analyze the electrical conduction mechanism involved, and the magnetic behavior of the V2O5 microstructures.

In this work, a facile hydrothermal method was adopted to synthesize V2O5 microstructure, and the prepared microstructures were characterized by using XRD, Raman spectroscopy, SEM, TEM and SAED. Further, we have performed the electrical and magnetic measurements of the prepared V2O5 microstructures using physical properties measurement system (PPMS). Herein, we have observed the two type of electrical transport mechanism, thermally activated band conduction in high temperature regime (T ≥ 285K) and variable range hopping conduction at lower temperature regime (T ≤ 285K). The experimentally observed behavior of V2O5 microstructure is going to discussed in this report along with magnetic characteristic of V2O5 which shows its anomalous behavior in a narrow temperature range 45K–60K, where the magnetic ground state is antiferromagnetic.

Section snippets

Experimental detail

V2O5 microstructure was synthesized by a simple hydrothermal method. For this purpose, 1.2 gm amount of V2O5 and desired amount of oxalic acid dihydrate were taken as starting materials and dissolved in de-ionized (DI) water under vigorous stirring at 80 °C for 2 h till the clear blue color solution has obtained. After that 3 ml of hydrogen peroxide (30%) was added to the solution. with continuous stirring for 30 min, desired amount of absolute ethanol was added into the obtained solution and

X ray diffraction and Raman analysis

Structural and phase characterization of as prepared powder vanadium oxide is investigated by X-ray diffraction analysis. XRD diffraction pattern as shown in Fig. 1(a) reveals the crystalline nature of V2O5 with the orthorhombic crystal structure and is in well agreement with the JCPDS card no. 41–1426 having space group Pmmn (59) and the corresponding unit cell parameters are a = 11.494 Å, b = 3.557 Å, c = 4.364 Å. The XRD spectra confirm the phase formation of V2O5 microstructure [14].

For the

Conclusion

In summary, orthorhombic V2O5 microstructures self-assembled by nano rods have synthesized by hydrothermal process. The crystalline V2O5 microstructure confirmed by SAED pattern. The temperature dependent resistivity shows the different kind of electrical transport behavior such as in high-temperature range (285 K ≤ T ≤ 380 K), its follow thermally activated band conduction and in the low-temperature range 200 K–285 K, it shows the variable range hopping conduction of the charge carriers. From

CRediT authorship contribution statement

Hemlata Dhoundiyal: Writing - original draft. Pintu Das: Supervision, Writing - original draft. Mukesh C. Bhatnagar: Supervision, Writing - original draft.

Declaration of competing interest

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Acknowledgment

We acknowledge the financial support from Department of Science and Technology, India for INSPIRE Fellowship. The author also acknowledges Prof. Sujeet Chaudhary, Department of Physics, IIT Delhi, India for a fruitful discussion on magnetic properties of V2O5. The author also thanks to Material Research Center, MNIT Jaipur, India for XPS measurement.

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