The conductivity of epitaxial diamond films lightly doped with boron has been studied at strong electric fields up to ~5 × 10⁵ V/ cm. It is shown that field ionization of boron acceptors in diamond at room temperature, because of the low concentration of free holes and the high binding energy of boron, occurs due to the Frenkel–Poole effect.

中文翻译：

---

强电场中金刚石中硼的受主杂质电离的Frenkel-Poole效应

轻掺杂硼的外延金刚石薄膜的电导率已在高达〜5×10 ⁵ V / cm的强电场下进行了研究。结果表明，由于Frenkel-Poole效应，室温下金刚石中硼受体的场电离由于游离空穴的浓度低和硼的高结合能而发生。