Abstract
The conductivity of epitaxial diamond films lightly doped with boron has been studied at strong electric fields up to ~5 × 105 V/ cm. It is shown that field ionization of boron acceptors in diamond at room temperature, because of the low concentration of free holes and the high binding energy of boron, occurs due to the Frenkel–Poole effect.
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Funding
This study was carried out in the framework of the state task and with partial support from the Russian Foundation for Basic Research (grant 18-02-01079).
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Altukhov, I.V., Kagan, M.S., Paprotskii, S.K. et al. The Frenkel–Poole Effect in the Ionization of an Acceptor Impurity of Boron in Diamond in a Strong Electric Field. J. Commun. Technol. Electron. 65, 1336–1338 (2020). https://doi.org/10.1134/S1064226920110029
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DOI: https://doi.org/10.1134/S1064226920110029