In this work, a UV photodetector was fabricated by constructing a heterojunction between β phase GaOxNy prepared by atomic layer deposition and p-GaN prepared by metal organic chemical vapor deposition. The p-GaN layer shows an extremely sharp absorption characteristic with a cutoff edge of ∼365 nm, while β-GaOxNy shows a broad absorption behavior in the UV region due to its low crystal quality grown at low temperature (200 °C). The β-GaOxNy/GaN photodetector exhibits an obvious rectifying characteristic due to the formation of the type-II heterojunction and shows a high responsivity of 1.46 A/W at a bias voltage of −5 V and a rapid response speed (a rise time of 3.3 ms and a decay time of 6.8 ms). The investigation of the β-GaOxNy/GaN photodetector suggests a simple and effective strategy for next-generation high-performance optoelectronic devices.

中文翻译：

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用于紫外光电探测器的 III-GaN:Mg 上 GaOxNy 薄膜的低温原子层沉积

在这项工作中，通过在原子层沉积制备的 β 相 GaOxNy 和金属有机化学气相沉积制备的 p-GaN 之间构建异质结来制造紫外光电探测器。p-GaN 层显示出极其锐利的吸收特性，截止边缘约为 365 nm，而 β-GaOxNy 由于其在低温 (200 °C) 下生长的晶体质量低而在 UV 区域显示出广泛的吸收行为。由于形成了 II 型异质结，β-GaOxNy/GaN 光电探测器表现出明显的整流特性，在 -5 V 的偏置电压下显示出 1.46 A/W 的高响应度和快速响应速度（上升时间为3.3 ms 和 6.8 ms 的衰减时间）。