In this work, a UV photodetector was fabricated by constructing a heterojunction between β phase GaOxNy prepared by atomic layer deposition and p-GaN prepared by metal organic chemical vapor deposition. The p-GaN layer shows an extremely sharp absorption characteristic with a cutoff edge of ∼365 nm, while β-GaOxNy shows a broad absorption behavior in the UV region due to its low crystal quality grown at low temperature (200 °C). The β-GaOxNy/GaN photodetector exhibits an obvious rectifying characteristic due to the formation of the type-II heterojunction and shows a high responsivity of 1.46 A/W at a bias voltage of −5 V and a rapid response speed (a rise time of 3.3 ms and a decay time of 6.8 ms). The investigation of the β-GaOxNy/GaN photodetector suggests a simple and effective strategy for next-generation high-performance optoelectronic devices.
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23 November 2020
Research Article|
November 23 2020
Low temperature atomic layer deposition of GaOxNy thin film on III-GaN:Mg for UV photodetector
Special Collection:
Ultrawide Bandgap Semiconductors
Longxing Su
;
Longxing Su
a)
1
School of Physical Science and Technology, ShanghaiTech University
, Shanghai 201210, People's Republic of China
a)Authors to whom correspondence should be addressed: sulx@shanghaitech.edu.cn and xiejin@shanghaitech.edu.cn
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Sheng-Yu Chen;
Sheng-Yu Chen
1
School of Physical Science and Technology, ShanghaiTech University
, Shanghai 201210, People's Republic of China
2
Institute of Chemistry, Academia Sinica
, Taipei 11529, Taiwan
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Lianqi Zhao;
Lianqi Zhao
1
School of Physical Science and Technology, ShanghaiTech University
, Shanghai 201210, People's Republic of China
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Yuqing Zuo;
Yuqing Zuo
1
School of Physical Science and Technology, ShanghaiTech University
, Shanghai 201210, People's Republic of China
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Jin Xie
Jin Xie
a)
1
School of Physical Science and Technology, ShanghaiTech University
, Shanghai 201210, People's Republic of China
a)Authors to whom correspondence should be addressed: sulx@shanghaitech.edu.cn and xiejin@shanghaitech.edu.cn
Search for other works by this author on:
a)Authors to whom correspondence should be addressed: sulx@shanghaitech.edu.cn and xiejin@shanghaitech.edu.cn
Note: This paper is part of the Special Topic on Ultrawide Bandgap Semiconductors.
Appl. Phys. Lett. 117, 211101 (2020)
Article history
Received:
September 27 2020
Accepted:
November 09 2020
Citation
Longxing Su, Sheng-Yu Chen, Lianqi Zhao, Yuqing Zuo, Jin Xie; Low temperature atomic layer deposition of GaOxNy thin film on III-GaN:Mg for UV photodetector. Appl. Phys. Lett. 23 November 2020; 117 (21): 211101. https://doi.org/10.1063/5.0031097
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