The Van der Waals (vdWs) hetero-structures consist of two-dimensional materials have received extensive attention, which is due to its attractive electrical and optoelectronic properties. In this paper, the high-quality large-size graphene film was first prepared by the chemical vapor deposition (CVD) method; then, graphene film was transferred to SiO₂/Si substrate; next, the graphene/WS₂ and graphene/MoS₂ hetero-structures were prepared by the atmospheric pressure chemical vapor deposition method, which can be achieved by directly growing WS₂ and MoS₂ material on graphene/SiO₂/Si substrate. Finally, the test characterization of graphene/TMDs hetero-structures was performed by AFM, SEM, EDX, Raman and PL spectroscopy to obtain and grasp the morphology and luminescence laws. The test results show that graphene/TMDs vdWs hetero-structures have the very excellent film quality and spectral characteristics. There is the built-in electric field at the interface of graphene/TMDs heterojunction, which can lead to the effective separation of photo-generated electron–hole pairs. Monolayer WS₂ and MoS₂ material have the strong broadband absorption capabilities, the photo-generated electrons from WS₂ can transfer to the underlying p-type graphene when graphene/WS₂ hetero-structures material is exposed to the light, and the remaining holes can induced the light gate effect, which is contrast to the ordinary semiconductor photoconductors. The research on spectral characteristics of graphene/TMDs hetero-structures can pave the way for the application of novel optoelectronic devices.

由二维材料组成的范德华（vdWs）异质结构由于其吸引人的电气和光电特性而受到广泛关注。本文首先通过化学气相沉积（CVD）方法制备了高质量的大尺寸石墨烯薄膜。然后，将石墨烯膜转移到SiO ₂ / Si衬底上。接下来，通过大气压化学气相沉积法制备石墨烯/ WS ₂和石墨烯/ MoS ₂异质结构，这可以通过在石墨烯/ SiO ₂上直接生长WS ₂和MoS ₂材料来实现。/ Si基板。最后，通过AFM，SEM，EDX，Raman和PL光谱对石墨烯/ TMDs异质结构进行了测试表征，从而获得并掌握了形貌和发光规律。测试结果表明，石墨烯/ TMDs vdWs异质结构具有非常优异的薄膜质量和光谱特性。石墨烯/ TMDs异质结的界面处存在内置电场，可以有效分离光生电子空穴对。单层WS ₂和MoS ₂材料具有很强的宽带吸收能力，当石墨烯/ WS ₂时，来自WS ₂的光生电子可以转移到下面的p型石墨烯异质结构材料暴露在光线下，剩余的空穴会引起光闸效应，这与普通的半导体光电导体相反。石墨烯/ TMDs异质结构光谱特性的研究可以为新型光电器件的应用铺平道路。