Time domain complementary metal-oxide-semiconductor (CMOS) temperature sensors estimate the temperature of a sensory device by measuring the frequency, period and/or delay time instead of the voltage and/or current signals that have been traditionally measured for a long time. In this paper, the time domain CMOS temperature sensors are categorized into twelve types by using the temperature estimation function which is newly defined as the ratio of two measured time domain signals. The categorized time domain CMOS temperature sensors, which have been published in literature, show different characteristics respectively in terms of temperature conversion rate, die area, process variation compensation, temperature error, power supply voltage sensitivity and so on. Based on their characteristics, we can choose the most appropriate one from twelve types to satisfy a given specification.

中文翻译：

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时域CMOS温度传感器的分类和特性

时域互补金属氧化物半导体（CMOS）温度传感器通过测量频率，周期和/或延迟时间而不是传统上长时间测量的电压和/或电流信号来估计传感设备的温度。在本文中，通过使用温度估计函数将时域CMOS温度传感器分为十二种类型，该函数新定义为两个测得的时域信号之比。文献中已公开的时域分类CMOS温度传感器在温度转换率，芯片面积，工艺变化补偿，温度误差，电源电压灵敏度等方面分别表现出不同的特性。根据他们的特点，