In this work, the electrical and charge conduction characteristics of a contact structure featuring thermally evaporated MoO_x, deposited on n- and p-type crystalline silicon (c-Si), are extensively investigated by room temperature current–voltage (I–V), transmission line measurements (TLM), and temperature-dependent current–voltage measurements (I–V–T). XRD diffraction spectrum shows that the deposited MoO_x film exhibits amorphous nature. From TLM measurements, the values of contact resistivity are calculated to be \({\rho_{\rm {c}}}\): 55.9 mΩ-cm² for Ag/MoO_x/n-Si and \({\rho_{\rm {c}}}\): 48.7 mΩ-cm² for Ag/MoO_x/p-Si. The barrier parameters such as barrier height (\({{\phi }_{\mathrm{e}}}\)) and ideality factor (\({n}\)) are investigated by the thermionic emission theory for I–V and I–V–T measurements. The \({{\phi }_{\mathrm{e}}}\), \({n}\), and conventional Richardson plot demonstrate resolute temperature dependency, obeying the barrier height of Gaussian distribution model. The uniform barrier height values are calculated to be \({{\phi }_{\mathrm{b}}}\):1.24 eV for Ag/MoO_x/n-Si and \({{\phi }_{\mathrm{b}}}\):0.66 eV for Ag/MoO_x/p-Si from the extrapolation of \({{\phi }_{\mathrm{e}}}\) at \({n}\) \({=}\) 1 of the linear fitting of the variation with the experimental barrier height \({{\phi }_{\mathrm{e}}}\) with ideality factor. The activation energy (\({{E}_{\mathrm{a}}}\)) and Richardson constant (A*), obtained from Richardson plot, are much smaller than \({{\phi }_{\mathrm{b}}}\) and the theoretical values of n- and p-type c-Si. The modified Richardson plot yields more reliable Richardson constant and homogeneous barrier height values of 106.2 Acm⁻² K⁻² and 1.21 eV, 23.4 Acm⁻² K⁻² and 0.63 eV for Ag/MoO_x/n-Si and Ag/MoO_x/p-Si heterostructures, respectively. The results demonstrate that thermally evaporated MoO_x has particular advantages due to its good rectifying characteristics such as the extra enhancement to barrier height and low contact resistivity for interfacial layer applications.

在这项工作中，通过室温电流-电压（IV）广泛研究了沉积在n型和p型晶体硅（c-Si）上的具有热蒸发MoO _x的接触结构的电和电荷传导特性，传输线测量（TLM）和与温度相关的电流-电压测量（IV–T）。XRD衍射光谱表明，所沉积的MoO _x膜表现出非晶性质。从TLM测量，接触电阻率的值被计算为\（{\ RHO _ {\ RM {C}}} \）：55.9毫欧-厘米²为银/的MoO _X / N-Si键和\（{\ rho_ { \ RM {C}}} \）：48.7毫欧-厘米²为银/的MoO _X/ p-Si。通过热电子发射理论研究了IV的势垒参数，例如势垒高度（\（{{\ phi} _ {\ mathrm {e}}} \））和理想因子（\（{n} \））和I–V–T测量。的\（{{\披} _ {\ mathrm {E}}} \） ，\（{N} \） ，和常规理查森情节表明坚决温度依赖性，服从高斯分布模型的势垒高度。对于Ag / MoO _x / n-Si和\（{{{\ phi} _ {\\}，统一的势垒高度值计算为\（{{\ phi __ {\ mathrm {b}}} \）：1.24 eV mathrm {b}}} \）：根据\（{n} \）处\（{ {\ phi} _ {\ mathrm {e}}} \\）外推得出的Ag / MoO _x / p-Si为0.66 eV \（{=} \） 1与理想障碍因子的实验势垒高度\（{{\ phi} _ {\ mathrm {e}}}} \）的线性拟合拟合。从Richardson图获得的活化能（\（{{E} _ {\ mathrm {a}}} \））和Richardson常数（A *）远小于\（{{\ phi} _ {{mathrm {b}}} \）和n型和p型c-Si的理论值。对于Ag / MoO _x / n-Si和Ag / MoO _x，修改后的Richardson图可以得到更可靠的Richardson常数和均质势垒高度值，分别为106.2 Acm ^-2  K ^-2和1.21 eV，23.4 Acm ^-2  K ^-2和0.63 eV。/ p-Si异质结构。结果表明，热蒸发的MoO _x由于其良好的整流特性（例如，对界面层应用的势垒高度的额外增强和较低的接触电阻率）而具有特殊的优势。