Vanadium oxides (VOx) are among the most widely used materials that undergo a metal-insulator transition (MIT). A sharp difference in their electrical resistance is observed before and after they reach the transition temperature. A great deal of research is currently underway to apply these materials to various applications. However, vanadium oxides generally have varied phases, and thin films made of these materials often end up with a multi-phase microstructure rather than a single-phase one. Also, these thin films are not as stable as desired. This multi-phase microstructure negatively affects the electrical properties of a thin film; thus, ensuring that a single-phase microstructure is achieved is important. An analysis of those thin films as to how this multi-phase microstructure, if any, is configured is also important. In the present study, I–V measurements were conducted to identify and analyze all VOx phases present in the VO2 thin film and even those that were too small in volume to be detected by using X-ray diffraction (XRD) analysis. The experimental results were further analyzed using a space-charge-limited current model. As a result, at least two other phases, i.e., V5O9 and V2O3, were found to be present in the VO2 thin film.

中文翻译：

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利用电流-电压特性对VO2薄膜进行相位分析

钒氧化物 (VOx) 是最广泛使用的经历金属-绝缘体转变 (MIT) 的材料之一。在它们达到转变温度之前和之后观察到它们的电阻的显着差异。目前正在进行大量研究以将这些材料应用于各种应用。然而，钒氧化物通常具有不同的相，由这些材料制成的薄膜通常最终具有多相微观结构而不是单相微观结构。此外，这些薄膜也没有预期的那么稳定。这种多相微结构对薄膜的电性能有负面影响；因此，确保获得单相微观结构很重要。分析这些薄膜的多相微结构（如果有的话）是如何配置的也很重要。在目前的研究中，进行 I-V 测量以识别和分析 VO2 薄膜中存在的所有 VOx 相，甚至那些体积太小而无法使用 X 射线衍射 (XRD) 分析检测到的相。使用空间电荷限制电流模型进一步分析了实验结果。结果，发现至少两个其他相，即 V5O9 和 V2O3，存在于 VO2 薄膜中。