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Phase Analysis of a VO2 Thin Film by Using Its Current-voltage Characteristics

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Abstract

Vanadium oxides (VOx) are among the most widely used materials that undergo a metal-insulator transition (MIT). A sharp difference in their electrical resistance is observed before and after they reach the transition temperature. A great deal of research is currently underway to apply these materials to various applications. However, vanadium oxides generally have varied phases, and thin films made of these materials often end up with a multi-phase microstructure rather than a single-phase one. Also, these thin films are not as stable as desired. This multi-phase microstructure negatively affects the electrical properties of a thin film; thus, ensuring that a single-phase microstructure is achieved is important. An analysis of those thin films as to how this multi-phase microstructure, if any, is configured is also important. In the present study, I–V measurements were conducted to identify and analyze all VOx phases present in the VO2 thin film and even those that were too small in volume to be detected by using X-ray diffraction (XRD) analysis. The experimental results were further analyzed using a space-charge-limited current model. As a result, at least two other phases, i.e., V5O9 and V2O3, were found to be present in the VO2 thin film.

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Authors and Affiliations

  1. Industry-University Cooperation Foundation Team, Hanbat National University, Daejeon, 34158, Korea

    Jun Bin Ko & Sang Chul Lim

  2. Mobrick Co. Ltd., 218 Gajeong-ro, Youseong, Daejeon, 34129, Korea

    Bong-Jun Kim

  3. Electronics and Telecommunications Research Institute, ICT Creative Research Laboratory, Daejeon, 34129, Korea

    Seong Hyun Kim

Authors
  1. Jun Bin Ko
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  2. Sang Chul Lim
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  3. Bong-Jun Kim
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  4. Seong Hyun Kim
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Correspondence to Seong Hyun Kim.

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Ko, J.B., Lim, S.C., Kim, BJ. et al. Phase Analysis of a VO2 Thin Film by Using Its Current-voltage Characteristics. J. Korean Phys. Soc. 77, 975–980 (2020). https://doi.org/10.3938/jkps.77.975

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  • DOI: https://doi.org/10.3938/jkps.77.975

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