A compact and power-efficient current reference with curvature-correction temperature characteristics is presented. Introducing of PTAT current into the loop of CTAT current generator results in reduced TC of V_GS, which makes the aspect ratios of MOSFETs decrease when perform the first-order temperature compensation. Application of the subthreshold leakage current with curvature temperature feature to the reference current improves the temperature stability of output current to 52.1 ​ppm/°C over temperature range of −30 to 120 ​°C. This reference implemented in a 180 ​nm process with core area of 0.08 ​mm² can work in a wide voltage range from 1.0 ​V to 2.4 ​V and consume current about 1 ​μA ​at 1.2 ​V.

提出了一种具有曲率校正温度特性的紧凑，省电的电流基准。将PTAT电流引入CTAT电流发生器的环路中会导致V _GS的TC降低，这使得在执行一阶温度补偿时MOSFET的纵横比会降低。将具有曲率温度特性的亚阈值泄漏电流应用于参考电流可在-30至120°C的温度范围内将输出电流的温度稳定性提高至52.1 ppm /°C。该参考电压在180 nm的工艺中实现，核心面积为0.08 mm ^2，可以在1.0 V至2.4 V的宽电压范围内工作，在1.2 V时消耗的电流约为1μA。