The research approach on the investigation of recombination parameters of nonequilibrium charge carriers in Si technological plates by thermal imaging method is offered in this paper. The lifetime, diffusion length and surface recombination velocity of charge carriers are taken into account. The method is based on a study of the spatial distribution of Si samples thermal radiation beyond the self-absorption edge in the spectral range of 3–5 μm using by an IR camera. There are experimental results of silicon technological samples researches: distribution of the excess charge carriers concentration in silicon samples (n-Si, ρ = 500 Ω⋅cm, d = 8 mm) and the diffusion distribution of charge carriers at T = 150 °C. Temperature dependence of the diffusion length and volumetric lifetime in silicon samples is measured by three different methods: using an IR camera, by the kinetics of thermal radiation decline beyond the self-absorption edge during laser excitation, and by the method of photoconductivity attenuation. This approach is implemented in the process of input control of silicon plates used for solar panels manufacture at JSC “Quasar.”

中文翻译：

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用热成像法研究硅工艺板中非平衡载流子的复合参数

本文提出了利用热成像方法研究硅工艺板中非平衡电荷载流子复合参数的研究方法。考虑了电荷载流子的寿命、扩散长度和表面复合速度。该方法基于对超过自吸收边缘的 Si 样品热辐射在 3-5 μm 光谱范围内的空间分布的研究，该研究使用 IR 相机。有硅工艺样品研究的实验结果：硅样品（n-Si, ρ = 500 Ω⋅cm, d = 8 mm）中过剩电荷载流子浓度的分布和T = 150 °C时电荷载流子的扩散分布. 硅样品中扩散长度和体积寿命的温度依赖性通过三种不同的方法测量：使用红外相机，通过激光激发过程中超出自吸收边缘的热辐射衰减动力学，以及通过光电导衰减的方法。这种方法在 JSC“Quasar”用于太阳能电池板制造的硅板的输入控制过程中实施。