As the core device of the quantum information field, the single photon avalanche photodiode (SPAD) is a solid-state single photon detector with a pico-second level time-resolution, low bias voltage, high signal-to-noise ratio, and a low cost. However, the photon detection efficiency (PDE) of SPAD is not ideal. The traditional method is to optimize the device structure, while the dark count or time resolution characteristics of the device might be sacrificed. The metasurface integrated on SPADs provides a novel approach to achieving higher PDE. As a result, the SPAD device structure could be independently designed to realize a low dark count rate and a good time resolution. In this paper, many kinds of metasurface structures that could enhance the incident photons absorption, are analyzed. Those structures compatible with CMOS or other easily mass produced processes are attractive for revolutionary changes to conventional SPAD. As a result, a metasurface integrated SPAD would greatly push its applications in the field of quantum information, single photons imaging, life medicine, and other low-level light detections.

作为量子信息领域的核心设备，单光子雪崩光电二极管（SPAD）是固态单光子检测器，具有皮秒级的时间分辨率，低偏置电压，高信噪比和高灵敏度。低成本。但是，SPAD的光子检测效率（PDE）并不理想。传统方法是优化设备结构，同时可能会牺牲设备的暗计数或时间分辨率特性。集成在SPAD上的超表面为实现更高的PDE提供了一种新颖的方法。结果，可以独立地设计SPAD设备结构以实现低暗计数率和良好的时间分辨率。本文分析了许多可以增强入射光子吸收的超表面结构。那些与CMOS兼容的结构或其他易于大量生产的工艺，对常规SPAD的革命性变化具有吸引力。结果，超表面集成的SPAD将极大地推动其在量子信息，单光子成像，生命医学和其他低水平光检测领域的应用。