Applying high-k dielectrics can effectively reduce the operating voltage of Organic field-effect transistors (OFETs) to a few volts, thus significantly miniaturizing the dynamic power consumption of OFETs. Aluminum oxide is a promising dielectric material due to its high permittivity (k = 6–9). In this work, a simple, low-cost, low-temperature (only 85°C) solution process is used to prepare amorphous AlO_x dielectric thin films for high-performance flexible OFET applications. The AlO_x thin film was spin-coated and then solidified using deep ultraviolet irradiation without high-temperature annealing. The as-deposited AlO_x thin film has a root mean square surface roughness of 0.47 nm and maintains a very low leakage current density of 8 × 10^–9 A/cm² at 3.5 MV/cm and high dielectric constant of about 8.3 (at 1 kHz). The complete OFET based on this dielectric can operate at a 3 V gate bias with saturation mobility of 1.8 cm²/Vs, and steep sub-threshold swing of 110 mV/dec. Our work demonstrated a low-temperature solution process to fabricate a high-k metal oxide dielectric for low-power OFET applications.

应用高k电介质可以有效地将有机场效应晶体管（OFET）的工作电压降低到几伏特，从而显着最小化OFET的动态功耗。氧化铝由于其高介电常数（k = 6–9）而成为很有前途的介电材料。在这项工作中，使用一种简单，低成本，低温（仅85°C）的溶液工艺来制备用于高性能柔性OFET应用的非晶AlO _x电介质薄膜。将AlO _x薄膜旋涂，然后在不进行高温退火的情况下使用深紫外线照射使其固化。沉积后的AlO _x薄膜的均方根粗糙度为0.47 nm，并且保持非常低的泄漏电流密度8×10 ^–9在3.5 MV / cm时的 A / cm ²和约8.3的高介电常数（在1 kHz时）。基于该电介质的完整OFET可以在3 V栅极偏置下工作，饱和迁移率为1.8 cm ² / Vs，陡峭的亚阈值摆幅为110 mV / dec。我们的工作演示了一种低温解决方案工艺，该工艺可制造用于低功率OFET应用的高k金属氧化物电介质。