Abstract

We have systematically investigated the spin- and valley-dependent Seebeck effect in irradiated heavy group-IV monolayers including silicene, germanene, and stanene by means of semi-classical Boltzmann equation in diffusive regime. Due to the interplay of strong intrinsic spin-orbit coupling, perpendicular electric field, and off-resonant light field, the temperature-driven spin and valley conductivity can be controllable effectively. Except for numerical results, the amplitude of Seebeck coefficient is analyzed and found to be in direct proportion to the band gap at high temperature. It supplies a flexible method to modulate the Seebeck effect. In addition, we have compared the thermoelectric transport properties of different group-IV materials and found that the figure of merit shows great enhancement from silicene to stanene. These findings are excepted to provide a platform for the heavy group-IV materials in future spin–valley thermal and energy-saving devices.

中文翻译：

---

重型IV类单层中的带隙敏感塞贝克效应

摘要

我们已通过半经典Boltzmann方程在扩散状态下系统地研究了受辐照的重Ⅳ族单层塞贝克效应，该效应包括硅，锗和锡。由于强大的固有自旋轨道耦合，垂直电场和非共振光场之间的相互作用，温度驱动的自旋和谷电导率可以有效控制。除数值结果外，分析塞贝克系数的幅度，发现其与高温下的带隙成正比。它提供了一种灵活的方法来调节塞贝克效应。此外，我们比较了不同的Ⅳ族材料的热电输运性质，发现其品质因数显示出从硅烯到锡烷的极大提高。