Molecular interaction in two-dimensional (2D) van der Waals (vdW) interfaces has drawn tremendous attention for extraordinary materials characteristics. So far sensing characteristics of molecular interaction has been exploited extensively to reach the detection limit to a few parts-per-billion (ppb) of molecules and far less attention is given to the evolution of persistent current state due to the molecular exposure. Our study focuses on molecular memory operation of MoS₂-graphene heterostructure based field effect transistor. Metastable resistance state of the device due to the external perturbation of molecules is tuned to get a nearly relaxation free current state at much lower molecular concentration of 10 ppb to facilitate non-volatile memory features for molecular memory operation. An ultrafast switching operation in milli-second order is achieved at room temperature for the fastest recovery obtained so far in any molecular sensor. The process is co-controlled both by molecular as well as external charge density.

二维（2D）范德华（vdW）界面中的分子相互作用引起了非凡的材料特性，引起了极大的关注。迄今为止，已经广泛地利用了分子相互作用的感测特性，以达到对十亿分之几（ppb）的分子的检测极限，并且由于分子暴露而对持久电流状态的演化的关注也很少。我们的研究重点是MoS _2的分子记忆操作-石墨烯异质结构的场效应晶体管。调节由于分子的外部扰动引起的器件的亚稳态电阻状态，以便在低得多的10 ppb分子浓度下获得几乎弛豫的自由电流状态，以促进用于分子存储操作的非易失性存储功能。在室温下可实现毫秒级的超快开关操作，这是迄今为止任何分子传感器中最快的恢复速度。该过程由分子以及外部电荷密度共同控制。