Abstract—

The methods for suppressing transverse parasitic oscillation (TPO) at room temperature in Fe:ZnSe and Fe:ZnS lasers based on polycrystals doped using high-temperature diffusion have been considered. When active elements of this type are used, the development of TPO at large pump spots is due to the high dopant concentration on the surface of element end face and small length of the active medium as a whole (i.e., typical disk laser geometry). The TPO suppression methods under consideration are based on the fact that undoped Fe:ZnSe and Fe:ZnS exhibit significant absorption at the corresponding lasing wavelengths. Thus, the TPO development can be excluded by simple increase in the transverse size of active element and growth of active elements with several inner doped layers or an inner doped layer (layers) in the form of a meniscus. The problems of damage of active elements at large pump spots are discussed, and the potential of further increase in the radiation energy of Fe:ZnSe and Fe:ZnS lasers with room-temperature active elements is predicted.

中文翻译：

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多晶有源元素抑制Fe：ZnSe和Fe：ZnS激光器中的横向寄生振荡的研究进展

摘要-

已经考虑了在基于使用高温扩散掺杂的多晶的Fe：ZnSe和Fe：ZnS激光器中抑制室温下的横向寄生振荡（TPO）的方法。当使用这种类型的有源元件时，在大的泵浦点处TPO的产生是由于元件端面表面上的高掺杂剂浓度和整个有源介质的长度短（即典型的盘形激光器几何形状）引起的。正在考虑的TPO抑制方法基于以下事实：未掺杂的Fe：ZnSe和Fe：ZnS在相应的激光波长下显示出明显的吸收。因此，可以通过简单地增加有源元件的横向尺寸和以弯月形形式的具有几个内部掺杂层或一个或多个内部掺杂层的有源元件的生长来排除TPO的发展。