Solid-state sources consisting of cascaded Schottky diode-based frequency multipliers are commonly used to generate power at millimeter and submillimeter wave bands. In order to achieve increasing power at those frequencies, first-stage frequency multipliers have to handle a large amount of input power and generate enough output power to drive higher frequency multiplication stages. To that end, an appropriate electro-thermal design of multiplier circuits can result in improvement of power-handling capabilities without degradation of conversion efficiency. This work proposes an approach for the design of frequency multipliers where both electrical and thermal considerations are self-consistently taken into account along the optimization of the Schottky diode structure and the circuit layout. The proposed methodology is validated with the design and test of a split-block waveguide single-chip tripler circuit with output frequency in the 225–325-GHz band. Good agreement between predicted performance and measured results is obtained for a wide input power range and different ambient temperatures.

由级联的基于肖特基二极管的倍频器组成的固态源通常用于在毫米和亚毫米波段上产生功率。为了在这些频率上获得更高的功率，第一级倍频器必须处理大量的输入功率，并产生足够的输出功率以驱动更高的倍频级。为此，乘法器电路的适当电热设计可以提高功率处理能力，而不会降低转换效率。这项工作提出了一种设计倍频器的方法，其中在优化肖特基二极管结构和电路布局时，始终将电气和热方面的考虑因素考虑在内。所设计的方法已通过设计和测试分裂频率波导单芯片三路复用器电路进行了验证，该电路的输出频率为225-325 GHz频段。对于较宽的输入功率范围和不同的环境温度，可以在预测性能和测量结果之间取得良好的一致性。